MJE13005, Transistor simple bipolaire (BJT), NPN, 400 V, 75 W, 4 A
Référence: 59-07040
Référence: 59-01486
Specifications: Package / Case TO-3 Transistor Polarity NPN Collector−Emitter Voltage Vceo 225V Minimum hfe @ Current Ic @ Vceo 20 @ 2A @ 10Vdc Minimum Base Current Ib 2A Maximum Current Ic 5A
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Specifications: Package / Case TO-3 Transistor Polarity NPN Collector−Emitter Voltage Vceo 225V Minimum hfe @ Current Ic @ Vceo 20 @ 2A @ 10Vdc Minimum Base Current Ib 2A Maximum Current Ic 5A
Référence: 59-07040
Référence: 59-07062
Référence: 59-02981
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 45V(Min)- BD201 Complement to Type BD202/204 APPLICATIONS Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ω or 8Ω load